Kioxia and Western Digital Set to Unlock Higher Capacity and Performance 3D NAND Memory Kioxia,

Title: Kioxia and Western Digital to Unveil Higher-Capacity & Higher-Performance 3D NAND Memory Devices Kioxia and its research and manufacturing partner Western Digital are set to unveil their innovations for higher-capacity and higher-performance 3D NAND memory devices at the upcoming 2023 Symposium on VLSI Technology and Circuits. The two companies are looking to enable 8-plane 3D NAND devices as well as 3D NAND ICs with over 300 word-lines, reports eeNewsEurope. The new devices will be capable of achieving up to 205 MB/s program throughput and have a read latency of 40 μs, which is significantly better than the 56 μs offered by Kioxia's 128-layer 3D NAND. This is achievable due to the reduction of the data query area in the X direction to 41%, allowing faster data transfer between memory and host. Kioxia has implemented a one-pulse-two-strobe technique and hybrid row address decoders (X-DECs) to manage the increased wiring density, minimizing the degradation in read latency. These innovations will enable users to get higher-capacity and higher-performance 3D NAND memory devices with improved read/write performance. Learn more about Kioxia and Western Digital's upcoming innovations at the 2023 Symposium on VLSI Technology and Circuits.